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hexfet ? power mosfet hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design , that inter- national rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management. the tssop-8 package, has 45% less footprint area of the standard so-8. this makes the tssop-8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the tssop-8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. IRF7752PBF description ultra low on-resistance dual n-channel mosfet very small soic package low profile (< 1.1mm) available in tape & reel lead-free tssop-8 parameter max. units v ds drain- source voltage 30 v i d @ t a = 25c continuous drain current, v gs @ 10v 4.6 i d @ t a = 70c continuous drain current, v gs @ 10v 3.7 a i dm pulsed drain current 37 p d @t a = 25c power dissipation 1.0 p d @t a = 70c power dissipation 0.64 linear derating factor 8.0 mw/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c parameter max. units r ja maximum junction-to-ambient 125 c/w thermal resistance absolute maximum ratings www.irf.com 1 05/14/09 v dss r ds(on) max i d 30v 0.030@v gs = 10v 4.6a 0.036@v gs = 4.5v 3.9a

pd-96016a
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. pulse width 300s; duty cycle parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 0.91a, v gs = 0v t rr reverse recovery time ??? 25 ??? ns t j = 25c, i f = 0.91a q rr reverse recoverycharge ??? 23 ??? nc di/dt = 100a/s source-drain ratings and characteristics 37 0.91 when mounted on 1 inch square copper board, t<10 sec parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.030 ??? v/c reference to 25c, i d = 1ma ??? ??? 0.030 v gs = 10v, i d = 4.6a ??? 0.036 v gs = 4.5v, i d = 3.9a v gs(th) gate threshold voltage 0.60 ??? 2.0 v v ds = v gs , i d = 250a g fs forward transconductance 12 ??? ??? s v ds = 10v, i d = 4.6a ??? ??? 20 v ds = 24v, v gs = 0v ??? ??? 100 v ds = 24v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? -200 v gs = -12v gate-to-source reverse leakage ??? ??? 200 v gs = 12v q g total gate charge ??? 9.0 ??? i d = 4.6a q gs gate-to-source charge ??? 2.5 ??? nc v ds = 24v q gd gate-to-drain ("miller") charge ??? 2.6 ??? v gs = 4.5v t d(on) turn-on delay time ??? 7.2 ??? v dd = 15v t r rise time ??? 9.1 ??? i d = 1.0a t d(off) turn-off delay time ??? 25 ??? r g = 6.0 ? t f fall time ??? 11 ??? v gs = 10v c iss input capacitance ??? 861 ??? v gs = 0v c oss output capacitance ??? 210 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 25 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) a ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns s d g
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 4.6a 1 10 100 2.0 2.3 2.7 3.0 3.3 3.7 4.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.3v 20s pulse width tj = 25c vgs top 10.0v 5.0v 4.5v 3.3v 3.0v 2.7v 2.5v bottom 2.3v 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.3v 20s pulse width tj = 150c vgs top 10.0v 5.0v 4.5v 3.3v 3.0v 2.7v 2.5v bottom 2.3v
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.6a v = 15v ds v = 24v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 200 400 600 800 1000 1200 1400 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss
www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10b. switching time waveforms fig 10a. switching time test circuit
1 0.1 %

+ - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage fig 13b. gate charge test circuit fig 13a. basic gate charge waveform d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs, gate -to -source voltage (v) 0.000 0.020 0.040 0.060 0.080 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 4.6a 0 5 10 15 20 25 30 35 40 i d , drain current ( a ) 0.020 0.025 0.030 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = 4.5v vgs = 10v
www.irf.com 7 note: for the most current drawing please refer to ir website at http://www.irf.com/package/

!!! " " " " tssop8 package outline dimensions are shown in milimeters (inches)

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8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/2009

tssop-8 tape and reel information

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